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This study presents integrated circuit failure analysis (FA) results of reliability fail devices with high pin leakage (UHAST-“Unbiased Highly Accelerated Stress Test” and HTS-“High Temperature Storage”). FA reveals a crack along the STI (shallow trench isolation) sidewall and into Si crystallographic plane. Copper (Cu) was found by EDX analysis underneath Ni silicide layer and migrated into silicon...
Al:ZnO (AZO) thin films were deposited on quartz substrates by RF magnetron sputtering. The influences of thickness and substrate temperature on the structural, electrical, and optical properties of AZO films were investigated. Atomic force microscopy (AFM), transmission electron microscopy (TEM) and Hall Effect results revealed that a growth mode transition exists at the thickness of about 140 nm...
We present the first demonstration of a III-V MOSFET heterointegrated on a large diameter Si substrate and fabricated with a VLSI compatible process flow using a high-k/metal gate, self-aligned implants and refractory Au free ohmic metal. Additionally, TXRF data shows that with the correct protocols III-V and Si devices can be processed side by side in the same Si fabrication line The Lg = 500 nm...
ZnO-based thin film transistors (ZnO-TFTs) were fabricated by sputtering of ZnO on 200 nm SiO2 on p+-Si substrates. Forming gas annealing (FGA) was carried out directly after deposition at 400°C, 450°C, and 500°C for 1h. TFTs annealed at 400°C exhibited a high threshold voltage (VTh) of 11 V while those annealed at 500°C showed a low VTh of -3 V. Saturation mobility (μsat) increased slightly with...
The gap state density of nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions...
This paper investigates the performance of the single slot ring element for Ka-band reflectarray designs. Using the element rotation technique, two Ka-band circularly polarized reflectarray prototypes are designed and implemented, with different thicknesses of the substrate. The bandwidth is significantly enhanced when a thick substrate is used.
This paper presents a reflectarray configuration which supports the operation of six frequency bands. The proposed reflectarray has two substrate layers and each layer accommodates array elements of three frequency bands. Reflection phase curves of the array elements of different frequency bands are simulated. Interactions among elements are also explored.
The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. The weak or broken bonds may contribute to the redistribution of trap states, and lead to unstable electrical characteristics of the a-Si:H TFTs on plastic substrates. We conclude that the DOS of an a-Si:H layer...
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