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This paper presents a low dark current planar-type InGaAs guard-ring PIN photodiode using an atomic layer deposited (ALD) Al2O3 passivation. The fabricated guard-ring PIN photodiode with the Al2O3 passivation shows a reduced dark current density of 1.4×10−6 A/cm2 and an increased R0·A product of 1.4×105 Ω·cm2. We found that the dark current density was reduced by 60 % simultaneously using the guard-ring...
A low crosstalk planar-type InGaAs/InP photodiode structure is demonstrated using a deep guard-ring technique. The fabricated 5×5 photodiode array with the deep guard-ring structure shows the good crosstalk performance characteristic of 2.57 % at the nearest pixel. The obtained crosstalk characteristic is one of the best values among the planar-type InGaAs PIN photodiodes reported so far.
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