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For the first time, we can directly investigate the charge transport and intra-nitride behaviors of SONOS-type devices by exploiting the gate-sensing and channel-sensing (GSCS) method. Our results clearly indicate that for electron injection (+FN program), the electron centroid migrates from the bottom toward the nitride center, whereas for hole injection (-FN erase), holes first recombine with the...
By using poly-gate-sensing in addition to the conventional channel-sensing for Vt (or VFB) presents a novel transient analysis method that is very powerful to monitor the trapped charge vertical location in real time. The sensing in both modes provides two equations that are suitable to solve for two variables - the charge density (Q) and the average charge vertical location (x). Without the second...
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