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DC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I base-emitter junction and a type-II base-collector junction, resulting in unique device characteristics, such as low turn-on voltage, low crossover current,...
The proposed InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) exhibit a rather high current gain despite the use of a highly doped and thick InGaAsSb base layer, indicating that a high minority carrier lifetime exists in the InGaAsSb material. A high current gain over sheet resistance ratio, low cross-over current and a wide constant current gain range have been achieved, suggesting...
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