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We investigate both end-contact and side-contact structures between Al, Pd, Sc and carbon nanotube (CNT) in this paper. The different structures show the different chemical bonds and charge transfer at the metal-CNT contact interfaces. A novel method based on dipole effect is proposed to calculate the Schottky barrier height (SBH). Different SBHs for the contacts are due to different electro-negativity...
Recent experiment shows that scandium (Sc) can make a good performance contact with carbon nanotube (CNT) to fabricate n-type field effect transistor (n-FET). In this paper, we study the Schottky barrier (SB) of scandium (Sc) and palladium (Pd) with a (8,0) single-wall CNT (SWCNT) using first-principles calculation. We find that the p-type SB height (SBH) of the Pd-CNT contact is about 0.34 eV which...
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