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This paper proposes a method to explore the design space of FinFETs with double fin heights. Our study shows that if one fin height is sufficiently larger than the other and the greatest common divisor of their equivalent transistor widths is small, the fin height pair will incur less width quantization effect and lead to better area efficiency. We design a standard cell library based on this technology...
As short channel effect (SCE) and subthreshold leakage is demonstrated to be controlled effectively from conventional planar MOSFETs to the FinFET, we used a three-dimensional simulation of nFinFET structure to analysis fin width effect on the FinFET performance from perspectives of both on-state and off-state. In this study, the major leakage path of FinFET with varied Wfin takes place at middle...
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