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As short channel effect (SCE) and subthreshold leakage is demonstrated to be controlled effectively from conventional planar MOSFETs to the FinFET, we used a three-dimensional simulation of nFinFET structure to analysis fin width effect on the FinFET performance from perspectives of both on-state and off-state. In this study, the major leakage path of FinFET with varied Wfin takes place at middle...
Today, the heat dissipation prevents increasing the clock frequency of transistors. The supply voltage cannot be lowered below about 1V without performance degradation in state-of-the-art MOSFETs. Tunneling Field Effect Transistors (TFETs) have been investigated intensively because of their ability to reduce the 60 meV/dec subthreshold swing (SS), which limits power scaling. Recently a record high...
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