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Firstly, Cadmium Telluride (CdTe) thin films have been deposited on cleaned soda lime glass substrates at 300°C by using the RF magnetron sputtering technique. After that, Cu thin film was deposited for 5 minutes at 200°C on top of CdCl2 treated CdTe thin films by sputtering. Subsequently, CdTe and Cu stacks were annealed at 400°C for 15 minutes, 20 minutes and 25 minutes in a vacuum furnace. The...
Laser annealing of CdTe thin films with two different wavelengths has been studied in this work. The CdTe thin films were grown by thermal evaporation at a deposition current of 28A and then subjected to post deposition laser annealing at two different wavelengths of 532nm (green) and 1064nm + 532nm (infrared + green). The other parameters like laser output energy, stage velocity and pulse repetition...
In this paper, a modified structure for CdTe thin film solar cell was proposed by numerical analysis with an addition of a novel ZnO buffer to improve the conversion efficiency. The CdS window layer was reduced to 50 nm together with the insertion of zinc oxide (ZnO) as the buffer layer to prevent forward leakage current. The thickness of CdTe absorber layer was varied from 1000 nm to 5000 nm and...
Thin films of ZnS were deposited on cleaned soda lime glass substrates by using thermal evaporation and RF magnetron sputtering techniques. For thermal evaporation, a boat-substrate distance of 4cm was maintained. In case of sputtering, the deposition was done at a substrate temperature of 400°C. A comparative study of the structural and optical properties of the thin films prepared from both the...
Cadmium Telluride thin films have been deposited on FTO coated glass substrates by using the sputtering and thermal evaporation technique. CdTe thin film was firstly grown by sputtering at a substrate temperature 300°C, as well as CdTe thin film was also deposited by thermal evaporation technique. The grown films from both processes were annealed in a vacuum furnace of nitrogen ambient at pressure...
In this paper, we have investigated the effects of transition metal dichalcogenide namely Molybdenum ditelluride (MoTe2) layer formation in between Cadmium Telluride (CdTe) absorber layer and Mo back contact from numerical modeling. The main purpose was to investigate the possible effects of p-type MoTe2 in CdTe thin film solar cell. Energy band line-up in the vicinity of Mo/MoTe2/CdTe interface is...
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