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A suitable for high frequency applications with gallium nitride high-electron-mobility transistor overcurrent protection (OCP) circuit has been put forward. The proposed circuit depends on the detection of the drain-source voltage of GaN HEMT to judge the overcurrent fault, then turn off the GaN HEMT rapidly and send a fault signal to the microprocessor in the switching period which the overcurrent...
A semi-analytic approach for the electromagnetic analysis of large numbers of Through silicon vias (TSV) is presented in this paper. The method is based on cylindrical mode expansion method. The scattering and multi reflection effects between the vertical cylindrical vias are considered by expanding the electromagnetic waves surrounding the vias by cylindrical waves. As the method fully captured the...
A semi-analytic approach for the electromagnetic analysis of large numbers of Through silicon vias (TSV) is presented in this paper. The method is based on cylindrical mode expansion method. The scattering and multi reflection effects between the vertical cylindrical vias are considered by expanding the electromagnetic waves surrounding the vias by cylindrical waves. As the method fully captured the...
Simultaneous polarization demultiplexing and demodulation of PolMux-DPSK signals is demonstrated using a polarization splitter and rotator together with a single microring resonator on a silicon chip. System experimental results validate the concept.
We demonstrate a novel polarization diversity DPSK demodulator on the SOI platform with low polarization dependent loss (1.6 dB) and low polarization dependent extinction ratio (<;3 dB). System experiments verify the low polarization dependency.
RZ-DPSK to NRZ-DPSK format conversion in a silicon microring resonator is demonstrated experimentally for the first time at 41.6 Gb/s. The converted signal eye diagrams and bit-error-rate measurements show the good performance of the scheme.
The structural characteristics, deposition rate, absorption spectra and optical band gap of the silicon-germanium thin films, which were prepared by RF-PECVD, had been researched under the diffferent Germane's concentration. By test of Raman, all the silicon-germanium thin films presented amorphous and the spectral peaks were located around 480cm-1. According to the trend of optical band gap, the...
Aluminum-doped zinc oxide (ZnO:Al) films were deposited by RF magnetron on p-Si(111) substrates to fabricate Al-doped/p-Si heterojunctions. The structural and electrical properties of the Al-doped ZnO films were characterized by X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and Hall effect measurement, respectively. The results show that Al-doped ZnO thin films have high...
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