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We present an experimental demonstration of a metasurface analogue of electromagnetically induced transparency based on silicon instead of lossy plasmonic metal, therefore achieved a record-high quality factor of 483 and a sensing figure-of-merit of 103.
In this talk, I will discuss our recent efforts to develop purely dielectric metamaterials possessing low absorption loss at optical frequencies. I will discuss implementations ranging from wavefront control to high Q-factor resonances.
The Casimir force originates from quantum fluctuations. While this force is too weak to have any measurable effects between objects at separations larger than ~ 10 μm it dominates the interaction between electrically neutral surfaces at the nanoscale. By fabricating a doubly clamped microbeam for sensing the force and a comb actuator to control the distance, we demonstrate that the Casimir force can...
Vertically aligned carbon nanofiber (VACNF) is a promising electrode structure for electrochemical biosensor platform. In this paper, we address the mechanical stability and reusability issues of VACNF arrays. We demonstrate that improvement in mechanical stability requires special attention to surface treatment. We show that a thin SU8 layer on nanofiber forest forms a flexible passive layer at the...
We report on a nearly 8-fold increase in multi-hole defect photonic crystal biosensor response by incorporating insitu synthesis of DNA probes, as compared to the conventional functionalization method employing pre-synthesized DNA probe immobilization.
In this paper, we tailor the evanescent field coupling between two metal layers with subwavelength slit arrays and created a half-wave plate that imparts a half-wave phase delay to one component of linear polarization. The polarization of linearly polarized light at 1.55 µm wavelength can be rotated by up to 90 degrees, with polarization extinction ratio exceeding 22 dB. One advantage of this device...
The article describes a TEM-method for calibrating high-voltage pulse dividers. The method is based on Etalon-EMP use. It presents the results of method use for determining transient response form and rise time of five types of high-dividers of various designs. The article shows the advantages of this method compared with the known methods.
Enhancement mode AlN/GaN high electron mobility transistors (HEMTs) were fabricated from originally depletion-mode structures using oxygen plasma treatment on the gate area prior to the gate metallization. Starting with a depletion mode AlN/GaN HEMT, the threshold voltage of the HEMT could be shifted from -3.2 to 1 V depending on the oxygen plasma treatment time to partially convert the AlN barrier...
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