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This study investigates the charge collection efficiency of silicon strip detectors, produced by MICRON Semiconductor Co., Ltd. within the CERN RD50 collaboration, designed specifically to understand the effect of design parameters on the onset and magnitude of charge multiplication. Charge collection measurements are performed before and after irradiation with a proton fluence of 1×1015 1MeVneq/cm...
We investigate the charge collection efficiency of specially designed charge multiplication silicon strip detectors produced by MICRON in Liverpool under the framework of the CERN RD50 collaboration. Charge collection measurements are performed before and after proton and neutron irradiation to fluences of 1×1015 and 5×1015 1 MeV neq/cm2. Charge multiplication structures on these devices include varying...
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