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Silicon-germanium dots grown in the Stranski-Krastanow mode are investigated as sources of strain for electron mobility enhancement in the silicon capping layer. N-channel MOSFETs with the channel in the Si cap-layer over the SiGe dot (DotFETs) are fabricated in a custom-made process and have an average increase in drain current of up to 22.5% compared to the reference devices. The sources of device...
The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information is extracted from AFM measurements of fabricated samples. Strain on the upper surface of a 30 nm thick Si layer is in the range of 0.7%, as supported by finite element calculations. The Ge content...
The silicon germanium dots grown in the Stranski-Krastanow mode are used to induce biaxial tensile strain in a silicon capping layer. A high Ge content and correspondingly high Si strain levels are reached due to the 3-D growth of the dots. The n-channel MOS devices, referred to in this letter as DotFETs, are processed with the main gate segment above the strained Si layer on a single dot. To prevent...
We report the first direct measurement of the HH2-HH1 relaxation time for a SiGe QW with transition energy above the optical phonon frequency. The experiments have been performed for an active, electrically biased SiGe structure, and thus our results constitute a key parameter for the design and dynamic simulation of SiGe quantum cascade laser structures. The paper presents the 'as-measured' photocurrent...
We discuss the role of the discrete nature of misfit dislocations in XRD. For this, we consider a large number of different arrays of 60deg misfit dislocations relevant for SiGe/Si hetero-systems and introduce the concept of caustics of increasing order (Trinkaus and Naturf, 1973 and Trinkaus and Drepper, 1977) to determine the XRD peak positions for these arrays
We investigate the strain state in patterned SiGe lines of various widths after strain relaxation by He ion implantation and annealing (Hollander et al, 2001). We expected that the relaxation in such patterned virtual substrates must be more pronounced in one direction of the stripe than the other, thereby opening a possibility for further enhancement of hole mobility. We employed high-resolution...
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