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In this paper, the evolution of BTI induced leakage paths has been evaluated by Ig-RTN technique and demonstrated on HK/MG CMOS devices. First, RTN measurement has been elaborated to identify the location of traps and their correlation to the leakage current. Then, the measured gate current transient can be used to analyze the formation of breakdown path. The results show that the evolution of leakage...
For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown...
A high performance 22/20nm CMOS bulk FinFET achieves the best in-class N/P Ion values of 1200/1100 μA/μm for Ioff=100nA/μm at 1V. Excellent device electrostatic control is demonstrated for gate length (Lgate) down to 20nm. Dual-Epitaxy and multiple stressors are essential to boost the device performance. Dual workfunction (WF) with an advanced High-K/Metal gate (HK/MG) stack is deployed in an integration-friendly...
The quest for technologies beyond the 15 nm node complementary metal-oxide-semiconductor (CMOS) devices has now called for research on alternative channel materials such as Ge and III-V compound semiconductors with inherently higher carrier mobility than those of Si. Intensive effort has been made on GaAs nMOS devices owing to GaAs's superior electron mobility and its lattice parameter close to that...
On the ITR.S roadmap, the physical gate length, LG, has been rapidly scaling down, and will reach values below ~ 10nm beyond 2020. The single-gate (SG) extremely thin SOI (ETSOI) MOSFET, the double-gate (DG) FinFET, and the gate-all-around (GAA) Si nanowire (SiNW) MOSFET geometries may facilitate such scaling. Nevertheless, sub-10nm Lα scaling will be a great challenge because of the significant mobility...
This paper presents a detailed simulation study on the body doping effect on scaling of ultrathin silicon-on-insulator (SOI) MOSFETs with standard thick buried oxide (BOX). By employing high-k dielectrics, it is demonstrated that the minimum scalable channel length Lmin for fully-depleted (FD) SOI MOSFETs can be significantly improved from L min ~5tSi for undoped case to Lmin ~2t Si with doping. By...
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