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Vertical double gate floating body (FB) Z-RAM memory cell technology fabricated on a recess gate DRAM technology is presented. Cell operating voltage of 0.5V with comparable static retention and > 1000× improvement in dynamic retention is reported. The reported vertical double gate FB cell is the cell with the lowest operation voltage reported to date.
We present results of a comprehensive reliability evaluation of a 2T-2C, 4Mb, Ferroelectric Random Access Memory embedded within a standard 130nm, 5LM Cu CMOS platform. Wear-out free endurance to 5.4 × 1013 cycles and data retention equivalent of 10 years at 85°C is demonstrated. The results show that the technology can be used in a wide range of applications including embedded processing.
In this work, a new efficient simulation method with comprehensive physical models is developed to evaluate the performance of CTM at various biases, temperatures, and gate stack configurations. The dominant physical mechanisms on the P/E/R operations of CTM are clarified.
The effects of local accumulated free carriers on CTM cell's performance are investigated by numerical simulation. Simulation results indicates that local accumulated free carriers do not affect programming and erasing characteristic, however, they are important to CTM's retention characteristic, especially in low threshold state. For CTM cell with thick tunneling oxide and shallow trap depth in charge...
Ferroelectric memories are the most promising alternative to traditional embedded nonvolatile memories, such as flash and EEPROMs, because of their fast read/write cycle time, non-volatile data retention, low voltage/low power operation and low number of additional masks for fabrication (+2). An embedded ferroelectric memory (FRAM) has been developed using a 1.5 V, 130 nm 5 metal layer Cu/FSG logic...
Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4times1012 cycles shows no degradation of switched polarization. 10 year, 85degC, data retention life is demonstrated with 125degC data bake to 1,000 Hrs with no fails.
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