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In this paper, a parallel arrangement of a silicon MOS-gated thyristor structure and a silicon carbide Power MOSFET is proposed and experimentally demonstrated for the first time. Experimental results show that the hybrid switch exhibits low conduction losses at low current levels as well as large current-carrying capability at high current levels. In addition, compared to Clustered IGBT structure,...
We show that scaling rules, quantum confinement in thin bodies, and the resulting gate leakage render imperative the use of low-dimensionality materials as channels in devices scaled beyond the 10 nm gate length. We then consider a few examples of two-dimensional materials of great interest, graphene and bilayer graphene, and show how the dielectric environment (gate and interlayer insulators, nearby...
Trench gate MOS controlled devices are more desirable in power modules because their reduced Vce(sat) enables increased output power density. However with increased drift region thickness with voltage rating, there is significant increase in conduction loss in Trench gate IGBT (T-IGBT) due to low plasma density from inherent pnp transistor action. On the other hand a well-designed trench gate MOS-controlled...
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