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As tri-gate transistor technologies continue to scale to smaller dimensions, a variety of aging mechanisms become important to include in models to accurately predict end-of-life transistor performance. Traditional aging effects such as BTI and hot carrier continue to play a role. However, modeling these mechanisms becomes more complicated with the addition of recovery, variation, and local self-heating...
In this paper, the evolution of BTI induced leakage paths has been evaluated by Ig-RTN technique and demonstrated on HK/MG CMOS devices. First, RTN measurement has been elaborated to identify the location of traps and their correlation to the leakage current. Then, the measured gate current transient can be used to analyze the formation of breakdown path. The results show that the evolution of leakage...
In this paper, a fully automated, low-cost, real-time illuminance measurement system for LED long term reliability tests is proposed. The system has only one photodetector to measure the illuminance of all samples inside the test chamber during the reliability test. With a proprietary algorithm, a single photodetector can measure the illuminance of all samples in the chamber by sequential scanning...
In this paper, a fully automated, low-cost, real-time illuminance measurement system for LED long term reliability tests is proposed. The system has only one photodetector to measure the illuminance of all samples inside the test chamber during the reliability test. With a proprietary algorithm, a single photodetector can measure the illuminance of all samples in the chamber by sequential scanning...
This paper proposes a methodology to assess cyber-related risks and to identify critical assets both at power grid and substation levels. The methodology is based on a two-pass engine model. The first pass engine is developed to identify the most critical substation(s) in a power grid. A mixture of Analytical hierarchy process (AHP) and (N-1) contingent analysis is used to calculate risks. The second...
This paper presents a indices-based dispatching support system which provides a hierarchical multi-level multi-department structure to combines a management-level and technical level to the system operators. By digging a “past” state, monitoring a “present” state and forecasting a “future” state, a comprehensive system operation can be realized. The advanced dispatching operation can be further provided...
A high performance 22/20nm CMOS bulk FinFET achieves the best in-class N/P Ion values of 1200/1100 μA/μm for Ioff=100nA/μm at 1V. Excellent device electrostatic control is demonstrated for gate length (Lgate) down to 20nm. Dual-Epitaxy and multiple stressors are essential to boost the device performance. Dual workfunction (WF) with an advanced High-K/Metal gate (HK/MG) stack is deployed in an integration-friendly...
WOx formed by plasmas oxidation shows promising multibit/cell resistance memory characteristics [1]. The simple memory is completely self-aligned, requiring no additional masks and has a small 6F2 cell size. In this work we introduce a graded oxide device that is highly reliable (250??C baking for ≫ 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.
This paper designs a method to collect the technical information that is vital for product improvement actions before market release. The basic idea is to avoid loss of information and waste of time in the following ways: Use a direct information exchange between the customer and the development department. Start a consumer test as soon as a pilot series of products has been manufactured. Choose the...
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