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Non-oriented (NO) silicon steel sheet is widely used as industrial materials in electrical machine, and its magnetostriction is a key factor of causing vibration and noise of a large-scale synchronous machine [1, 2]. There have been some foregoing researches to develop magnetostriction of silicon steel sheet under alternating and rotational magnetic flux density based on a two-dimensional (2-D) magnetic...
UTBB FDSOI technology is a faster, cooler and simpler technology addressing the performance/energy consumption trade-off. In this paper we present the main front-end-of-the-line knobs to scale down this promising technology to the 10nm node.
Graphene layers can be used as the conductive channel in metal oxide semiconductor field effect transistors, metallic electrodes in capacitors, etc. However, when graphene is grown by chemical vapor deposition (CVD), substrate-induced corrugations and strain-related wrinkles formed on the graphene layer impoverish the properties of these devices by lowering the conductance and increasing their variability...
Advanced junction scaling with device performance gain, leakage reduction and reduced threshold voltage (Vth) variation are critical for CMOS 28nm node and future scaling. In this paper, implant induced defect engineering for higher drive current with reduced SRAM defectivity, advanced junction formation and Vth mismatch (Vtmin) on a state-of-the-art 28nm logic flow are demonstrated and discussed.
In this study, we propose a methodology to estimate 3D+time maps of left ventricular fibre strain from human structural and dynamic MRI data. A finite element model integrates fibre principal direction throughout the left ventricle from an ex vivo human diffusion tensor MRI acquisition and motion from tagged MRI. This combination enables the estimation of fibre strain and its variation throughout...
Strain techniques have been adopted and widely used in the advanced nodes since early 65nm for carrier mobility improvement. For PMOS, eSiGe incorporation in the SD is the process of choice to induce compressive strain in the channel for mobility improvement. To further lower the contact resistance, it is preferred to boost Boron concentration for pSD formed by eSiGe process. Normal implant process...
Microdrawing is an important process of fabricating the microparts, especially the metal microparts. Under the micro tension test, it was found that the stress-strain curve increased steeply in the elastic deformation stage but gradually in the plastic deformation stage, with the decrease of the grain size. According to the stress-strain curve, the material model was established. Then the influence...
Lanthanum doped lead zirconate titanate [(Pb,La)(Zr,Ti)O3] transparent ceramics show relaxor behavior when the content of Lanthanum is 4-14% and molar ratio of Zr/Ti is 65/35. They were known as important electro-optical materials, but few researches had been focused on their electromechanical behavior. In the present work, we report a large recoverable electrostrain of about 0.2% at 1.0 kV/mm in...
We report on the growth of InAs quantum-dash in InGaAlAs quantum-well structure on InP substrate using molecular beam epitaxy. The influence of different growth parameters such as InAs layer thickness, quantum barrier growth temperature, and number of stacking layers on the morphology and optical properties of dash structures were studied. The results serve as useful references for improved epitaxial...
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