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A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability...
On-chip inductors with 2 levels of magnetic material were integrated into an advanced 130 nm CMOS process to obtain over an order of magnitude (>14times) increase in inductance and Q-factor, significantly greater than prior values of 2.3times for high frequency inductors. The magnetic material is shown to operate at frequencies beyond 6.4 GHz for 1 nH inductors. An amorphous CoZrTa alloy exhibiting...
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