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A capacitor-less DRAM cell based on ferroelectric-gate memory transistor structure, FErroelectric-DRAM (FEDRAM), is introduced. Compared to the conventional DRAM cell, it offers much simpler cell structure, longer retention time, better scalability, and lower power consumption. Cell size of 4F2 can be realized. It is also most suitable for embedded applications. Recent developments of the HfO2-based...
A broad range of materials is currently being studied for possible use as the insulating layer in next generation metal‐oxide‐semiconductor transistors. Inelastic electron tunneling spectroscopy (IETS) has become a powerful tool to characterize both the structural and electrical properties of the resulting device structures made from these materials. IETS can address issues related to reactions and...
We report the properties of a MANAS charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality deposited by the molecular-atomic-deposition (MAD) technique. Compared with state-of-the-art MANOS ...
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