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A CMOS divide-by-eight static frequency divider operating at 1.0 GHz and dissipating only 1.7 mW at a supply voltage of 1.0 V is described. The corresponding power and power-delay products for the first state toggle-type flipflop (T-F/F) are 0.32 mW and 0.32 pJ, which are the best yet reported for any CMOS flipflop. The divider owes its high performance to 0.2 mu m gate CMOS process technology and...
Deep submicrometer CMOS devices having a novel well structure using thin epitaxy over a buried n+ layer, a p-type substrate, and trench isolation are proposed. Good isolation characteristics and high latchup immunity are obtained. The thin epitaxial layer, which is necessary for on-chip high-performance bipolar devices, lowers the voltage tolerance of the parasitic vertical bipolar, and causes a new...
A CMOS 1/8 frequency-divider IC operating at up to 3.2 GHz at a suitable supply voltage of 2.0 V has been achieved with 0.2 mu m gate CMOS technology. The IC consists of three T-connected D-type flip-flops and buffers. A clocked inverter type dynamic flip-flop is adopted for the first stage binary frequency divider. A supply voltage of only 1.2 V is sufficient for operation at 2.0 GHz dissipating...
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