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We developed a pin-diode silicon microring modulator that used side-wall grating waveguides. Modulator exhibits 0.28- V·cm-VπL at 25 GHz in forward-biased operation mode. We achieved 50-Gb/s operation at a driving voltage of 1.96 volts-peak-to-peak (Vpp).
We present a 50-Gb/s silicon Mach-Zehnder modulator that uses the shortest 250-µm long phase shifter. A 4.2-dB extinction ratio was obtained at 50 Gb/s with 4.35 V peak-to-peak (Vpp) driving signals and 45-mW power consumption.
We developed a high-speed Mach-Zehnder modulator with the shortest phase shifter (100-μm length) reported so far. Our modulator exhibited 25-Gbps eye-openings with an extinction ratio of 4.3 dB and on-chip insertion loss of 4.7 dB.
A silicon Mach-Zehnder modulator, which has side-wall-grating waveguide, is investigated. Using the fabricated device, 12.5-Gb/s operation was demonstrated. A modulation efficiency (VπL) of 0.29 V·cm was determined from the measured extinction ratio.
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