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Improved resistive switching memory characteristics in a W/Ti/Ta2O5/W device with a small size of 150 nm have been investigated for the first time. TEM image shows amorphous Ta2O5 film with a thickness of ~7 nm. Memory device has a good repeatable bipolar memory behavior and a large sensing margin of ~2000. The memory device has shown good endurance of at least 104 cycles and excellent data retention...
The growth mechanism and cathodoluminescence of dual phase ZnS tetrapod tree-like heterostructures with the zinc blende structured trunks and the hexagonal wurtzite structured branches were prepared and characterised. The polarity induced growth of tetrapod ZnS trees was confirmed by advanced electron microscopy. Two strong UV emissions (centred at 3.68 and 3.83 eV) have been observed at room temperature,...
0.57(Bi0.8La0.2)FeO3-0.43PbTiO3 (BLF-PT) ceramics were successfully prepared by sol-gel technique combined with solid-state reaction method. X-ray diffraction (XRD) results revealed that single crystallites with rhombohedral phase could be obtained at 600 °C for 2 h, which is 150 °C lower than that required to prepare single phase material with the same composition from solid-state reactions. The...
P-type Bi0.5Sb1.5Te3 bulk material with fine nanostructure has been prepared by combining melt spinning technique with spark plasma sintering (SPS), and the effects of microstructure on the thermoelectric transport properties are investigated. Bi0.5Sb1.5Te3 ribbons with fine nanostructure are obtained during the melt spinning process and the grain sizes of Bi0.5Sb1.5Te3 are about 5-15 nm observed...
Sn-Ag-Cu lead-free solder alloy is the most potential substitute for Pb-Sn solder, while it still has problems because of its high melting point and poor application properties. We have developed new types lead-free solder alloys of Sn-Ag-Cu-Al-Ni and Sn-Zn-Bi-In-P. The properties of anti-oxidization and stability are enhanced by adding Ni, Al and P. The new Sn-Zn-Bi-In-P lead-free solder has good...
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