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Hot carrier (HC) reliability of SOI LDMOS suppressing self-heating effect was investigated. We evaluated an appropriate HC degradation by controlling junction temperature (Tj) within the temperature range the circuit is actually operated of. A gate pulse HC evaluation system was used to suppress the self-heating effect during HC stress. Pulse HC stress shows that the drain current shift is three times...
It is necessary for an SFCL to recover quickly after fault removal to ensure power system stability. Resistive type SFCLs have been considered to return more slowly to superconducting state after fault removal compared with other types of SFCL due to the heat generated during the operation. Then, it is necessary to investigate the recovery time in detail to design an SFCL. This paper describes the...
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