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This paper presents a novel Field PMOS (FPMOS) with a LOCOS oxide film as a gate oxide for Plasma Display Panel scan drivers. In this novel FPMOS, an Aluminum Field Plate (Al-FP) is connected to a gate electrode and works as a secondary gate at high gate voltage (Vg). The drain current (Ids) of the novel FPMOS is about three times larger than that of conventional one at drain voltage (Vd)/Vg=-150/-200V,...
Hot carrier (HC) reliability of SOI LDMOS suppressing self-heating effect was investigated. We evaluated an appropriate HC degradation by controlling junction temperature (Tj) within the temperature range the circuit is actually operated of. A gate pulse HC evaluation system was used to suppress the self-heating effect during HC stress. Pulse HC stress shows that the drain current shift is three times...
We developed a state-of-the-art BiC-DMOS process using 0.15 mum technology. High-voltage MOSFETs were embedded in our standard 0.15 mum CMOS process with a 0.13 mum high density NVM. More intelligent mixed signal devices can flexibly be realized by this technology. Moreover, the reliability of n-ch LDMOS is markedly improved by the novel structure of stepped-STI LDMOS.
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