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In this work, a top-down approach has been adopted for the first-time to pattern single-crystalline Si NW on SOI substrates using planar technology processes. The two critical parameters of the nanowire are defined by the thickness of Si active layer and the width of a masking spacer. The NW has an elliptical cross-section having a semimajor axis less than 150 nm and the semiminor axis depending on...
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