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There is a growing interest in generating mid-infrared (mid-IR) supercontinuum (SCG) using CMOS compatible platforms for applications such as, optical coherence tomography and molecular spectroscopy [1, 2]. SCG spanning from the telecom band to the SWIR (< 3 μm) has already been achieved using silicon-based platforms such as silicon-on-insulator, silicon nitride-on-insulator and silicon-germanium-on-insulator...
We demonstrate an octave spanning, 1.9–6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. This establishes SOS as a promising new platform for integrated nonlinear photonics in the mid-IR.
We report nonlinear measurements of SiGe waveguides in the mid-IR performed in the picosecond and femtosecond regime and compare the results to numerical calculations. Nonlinear properties of SiGe waveguides in the mid-IR are extracted.
We measure the nonlinear response of CMOS-compatible SiGe waveguides in the mid-infrared. Comparing with numerical calculations, we extract the multi-photon absorption coefficients and the induced free-carrier absorptions for wavelengths between 3µm and 5µm.
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