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We present experimental results on high frequency field-effect transistors and fast photodetectors utilizing wafer-scale graphene grown epitaxially from silicon carbide.
We discuss the potential of graphene in various nanophotonic applications. High speed graphene photodetector and its application in optical communications are presented. Band gap engineering in graphene is covered, which may enable light generation applications.
Graphene and carbon nanotube based photonic devices, including light emitters and high bandwidth photodetectors are demonstrated. The potential of these truly nanometer scale, 2-dimensional (graphene) and quasi 1-dimensional (nanotube) carbon materials in photonics are discussed.
Photocurrent imaging was used to study the potential profiles in a graphene transistor. The impact of source/drain metal electrodes on potential profile of the graphene channel extends beyond the contact for a few hundred nanometers, and varies considerably with gate bias.
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