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A 2-D model of aluminum-ion implantation into 4H-SiC (0001) was developed and assessed through reverse current IR-voltage VR characteristics of p-n diodes. The model was based on a Monte Carlo simulation using a binary-collision approximation. For a moderate dose (1011 - 1013 cm-2), simulated isoconcentration contours were independent of the orientation of the masking edge. This condition allowed...
Above 500V class superjunction (SJ) MOSFETs fabricated by deep-trench etching and epitaxial growth are investigated. These SJ-MOSFETs show the lowest specific on-resistance (RonA) of 21.3mOmegacm2 at a breakdown voltage (VB) of 540V, among reported trench-filling type of devices in the same voltage class. These RonA-VB trade-off characteristics are accomplished by optimizing doping concentrations...
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