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Photonic devices operating in the mid-IR (3 μm to 13μm wavelength range) are of great interest for a wide range of applications, such as free-space communications, environmental monitoring or defence. Group IV-based material platforms [1], such as silicon-on-insulator (SOI)[2] and silicon-on-sapphire (SOS)[3] have attracted significant interest for mid-IR integrated photonics. However, absorption...
There is a growing interest in generating mid-infrared (mid-IR) supercontinuum (SCG) using CMOS compatible platforms for applications such as, optical coherence tomography and molecular spectroscopy [1, 2]. SCG spanning from the telecom band to the SWIR (< 3 μm) has already been achieved using silicon-based platforms such as silicon-on-insulator, silicon nitride-on-insulator and silicon-germanium-on-insulator...
We demonstrate an octave spanning, 1.9–6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. This establishes SOS as a promising new platform for integrated nonlinear photonics in the mid-IR.
We report nonlinear measurements of SiGe waveguides in the mid-IR performed in the picosecond and femtosecond regime and compare the results to numerical calculations. Nonlinear properties of SiGe waveguides in the mid-IR are extracted.
We measure the nonlinear response of CMOS-compatible SiGe waveguides in the mid-infrared. Comparing with numerical calculations, we extract the multi-photon absorption coefficients and the induced free-carrier absorptions for wavelengths between 3µm and 5µm.
The mid infrared (mid-IR, wavelength range between 2 and 10 μm) is of great interest for a huge range of applications such as medical and environment sensors, security, defense and astronomy.
Raman scattering can be exploited for amplification in optical fiber telecommunications or, chemical identification in spectroscopy, but represents a source of detrimental noise photons for quantum communications. The spectral distribution of spontaneous Raman scattering (SpRS) can be measured in bulk samples with the free-space 90° scattering method [1]. In long fibers the SpRS spectra can be measured...
We demonstrate a silicon chip based all-optical device capable of providing single shot time-domain measurements of picosecond pulses near λ=1550nm. The 96µm long device relies on optical third harmonic generation between two pulses in a slow light photonic crystal waveguide.
We demonstrate all-optical XOR logic function for 40Gb/s DPSK signals in the C-band, based on four-wave mixing (FWM) in a silicon nanowire. Error-free operation with a system penalty of ∼ 4.3dB at 10−9 BER has been achieved.
We demonstrate all-optical wavelength conversion at 10 Gb/s for differential phase-shift keyed (DPSK) data in the C-band, based on four-wave mixing (FWM) in a silicon ring resonator. Error-free operation with a system penalty of ∼ 4.1 dB at 10−9 BER is achieved.
We demonstrate a silicon chip-based all-optical device providing single shot time-domain measurements of picosecond pulses near X=1550nm. The auto-correlation visible signal arises from third-harmonic generation in a 96 μm long slow light photonic crystal waveguide.
We report low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses of < 1dB/cm at λ=1550nm, < 1.5dB/cm at λ=2080nm and < 2dB/cm at λ = 5.08 μm.
We report low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses of < 1dB/cm at λ=1550nm and < 2dB/cm at λ = 5.08 μm.
We show that slow light is capable of enhancing nonlinear optical processes for ultra-high bandwidth all-optical signal processing on a chip at bit rates approaching 1Tb/s/. We achieve residual dispersion and optical signal to noise ratio (OSNR) monitoring via slow-light enhanced optical third-harmonic generation in dispersion engineered 2D silicon photonic crystal waveguides at bit rates from 40Gb/s...
We demonstrate a silicon nanowire based radio frequency spectrum analyser based on cross-phase modulation. We show that the device is accurate, with cross-chirp from photogenerated free-carriers negligible and measure RF spectra for 640Gbaud on-off-keyed data.
We demonstrate how nonlinear optical phenomena are enhanced by slow light in dispersion engineered silicon photonic crystal waveguides, and how this can be applied to perform all-optical signal processing at 640 Gbit/s.
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