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We systematically investigated the NBTI degradation of Si-channel p-type tunnel FETs (pTFETs). The NBTI degradation mechanism of pTFETs is almost the same as that of pFETs. It was clarified that the NBTI degradation of pTFETs is only caused by the trap charge and the interface state degradation located in the tunneling region near the n+ source/gate edge. Furthermore, in terms of the BTI degradation...
This paper reports the positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel field-effect transistors (TFETs) with high-k gate stacks. The subthreshold slope (SS) is not degraded at all while the threshold voltage (Vth) shifts in the positive direction by the PBTI stress. The activation energy of ΔVth for TFETs is almost the same as FinFETs, indicating that the...
The objective of this study is to presume the human psychological condition with the biological signal, and to control the living environment automatically based on the result. In this paper, the influence of living environment on the human body was examined as a fundamental study. It is considered that the indoor living environment typified by light environment has a strong influence on the human...
We have investigated the stress memorization technique (SMT) using poly-gates through both physical analysis and electrical characterization. It has been clarified that channel compressive strain in the vertical direction originates from poly-gate volume expansion, which is associated with both grain growth and highly concentrated impurities implanted into gates. By optimizing key factors in the SMT...
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