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This paper presents an analysis and calibration of process variations for an array of temperature sensors, which are incorporated into a CMOS image sensor chip. Making use of the experimental results of more than 500 temperature sensors implemented on the same chip, the proposed calibration method has removed their process variations from 14.3 % to 2.5 % (3 sigma).
We investigated the temperature dependence of dark current, avalanche gain and breakdown voltage in Al0.85Ga0.15As0.56Sb0.44 (hereafter AlGaAsSb) avalanche photodiodes (APDs) with avalanche region widths, w = 90 and 178 nm. There is negligible band to band tunnelling currents and a very weak temperature dependence of gain observed in both didoes. The temperature coefficient of breakdown voltage, C...
We report the avalanche properties of InAs avalanche photodiodes (APDs), extracted from avalanche gain and excess noise measurements performed under pure electron and pure hole injections, and from Monte Carlo simulations. For a given avalanche width electron initiated gain was found to be significantly higher than conventional InP and Si APDs. Hole initiated multiplication was negligible confirming...
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