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In this paper, a comparative study of different harmonic elimination techniques has been adopted to mitigate the undesired dominant lower order harmonics from the output voltage of cascaded multilevel inverter. It has been shown that particle swarm optimization technique gives better result as compared to the mathematical theory of resultant and newton raphson method. Theoretical results are verified...
The focus of this paper is on a modeling methodology for capturing the complex mechanical behavior of a single layer pressure-sensitive adhesive (PSA) system, based on empirical observations of its stress-strain behavior. This study is motivated by the fact that there is very limited modeling ability to mechanistically predict the bimodal stress-strain curves of single-layer PSAs. Empirical observations...
(Mach2-TCRE is a two-dimensional (R-Z) radiation MHD Z-pinch simulation code with non-LTE population kinetics and radiation transport using ray tracing. The tabular collisional radiative equilibrium (CRE) based equation-of -state (EOS) model used in this code requires three table inputs: ion density, specific internal energy, and the effective escape probability in a strong radiating line, one from...
This paper presents a physics-based compact dc model for high voltage silicon on insulator lateral double diffused MOS (SOI-LDMOS) transistor, assuming uniform doping for the channel. It uses MM20 model for the channel and drift region under the thin gate oxide, and proposes a new model for the drift region under the field oxide. This model shows that the current at higher gate voltages in SOI-LDMOS,...
An analytical model for deep submicron MOSFETs based on quantum charge-sheet approximation including the drift-diffusion equation is presented. In this model the surface potential is obtained analytically considering quantum mechanical effects in the inversion region. The field dependent mobility variations, velocity saturation of carriers and secondary effects such as DIBL and channel length modulation...
A physics based model for the non-quasi-static (NQS) effects occurring in heterojunction bipolar transistors (HBTs) is presented. Following classical transistor theory, partitioned charge based (PCB) approach is extended to additionally model small-signal frequency-dependent (trans-) conductances. A new large-signal model is implemented in Verilog-A, and is tested for small-signal behavior. Results...
A compact model for silicon germanium heterojunction bipolar transistor based on transient integral charge-control (TICC) relations is presented. Partitioning factors are extracted from the numerically simulated data. A thorough analysis based on the transient and AC results has been carried out for checking the suitability of the model. No convergence problem is observed in transient simulation....
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