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We have found that the room-temperature 1/f-noise gate-voltage and frequency dependences of pMOS transistors are affected significantly by moisture exposure and total dose irradiation. The voltage noise power spectral density SVd is proportional to (Vg - Vt)-??, where Vt is the threshold voltage, Vg is the gate voltage, and ?? is a measure of the gate-voltage dependence. For the pMOS devices,...
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