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In this paper, we aim to present a surface potential based model for GaN High Electron Mobility Transistors. The analytical model is computationally efficient and can be accurately used for DC and RF predictions. It includes various effects of velocity saturation, access region resistance, temperature, gate current and noise.
Advances in drop tower technology have extended the range of obtainable accelerations in drop testing from 5,000 Gs to as much as 100,000 Gs. To achieve excitations in excess of the conventional 5,000 Gs, a mechanical accelerator, called the Dual Mass Shock Amplifier (DMSA), is mounted on the drop table. This device produces extremely high, short duration shock amplitudes, by using secondary impacts...
An analytical model for deep submicron MOSFETs based on quantum charge-sheet approximation including the drift-diffusion equation is presented. In this model the surface potential is obtained analytically considering quantum mechanical effects in the inversion region. The field dependent mobility variations, velocity saturation of carriers and secondary effects such as DIBL and channel length modulation...
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