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As the device size downscales, hot carrier aging (HCA) scales up and remerges as a major challenge to the reliability of modern CMOS technologies. The conventional method for predicting the HCA device lifetime is based on a power law kinetics and critically depends on the accuracy of the time power exponent, n. In this work, we study how to extract the n accurately. It will be shown that the widely...
Direct conversion architectures have the advantage of no image frequencies, fewer components and lower cost. However, local oscillator (LO) leakage reduces receiver sensitivity, causes LO pulling, and is a challenging problem for direct conversion transceiver design. Proposed is a mixer using the second-order harmonic of the LO. The proposed subharmonic mixer is based on a switching common-gate structure...
A millimetre-wave Gilbert-cell up-conversion mixer using standard 130 nm CMOS technology is presented. This mixer has a power conversion gain of better than 2 dB and has the highest reported OP 1 dB of -5.6 dBm when driven with a LO power of 0 dBm. The LO to RF isolation are better than 37 dB for LO from 57 to 65 GHz. Microstrip lines were employed for the matching network design at the mixer output...
This paper presents a 65nm low power technology offering a dual gate oxide process, multiple Vt devices at a nominal operating voltage of 1.2V, a nine level hierarchical Cu interconnect back-end of line process with low k dielectrics and 0.676mum2 and 0.54mum 2 SRAM cells, optimized for performance and density, respectively. The key focus of this technology has been low cost, process simplicity and...
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