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In this paper, we realize a series of 2-GHz wide rectangular optical filters based on the stimulated Brillouin scattering (SBS) effect in optical fiber with a frequency-swept pump and gain feedback compensation scheme. The frequency sweep pump period is a key parameter to achieve acceptable signal performance in the frequency-swept pump based SBS gain filter. We evaluate the system performance of...
Atomic gyroscopes can be used to measure carrier's rotation information by atomic spin or Sagnac interference effect, which have the characteristics of high precision, small volume, and so on. In the first part, atomic gyroscopes are discussed with their principles, and recent research statues. In the second part, it is presented that the progress of nuclear magnetic resonance gyro (NMRG), spin-exchange...
In this paper, an improved Bayesian estimator for single-channel speech enhancement is studied. Based on the observation that the speech discrete Fourier transform (DFT) coefficients are better modeled by a Chi distribution and the human auditory system properties, a generalized weighted Bayesian estimator with Chi priori is proposed. Then, with the speech presence uncertainty (SPU) estimation, a...
More than 80% of the energy we consumed comes from the combustion of fossil fuels. Non-equilibrium plasma generated by dielectric barrier discharge (DBD) can play a key role i n hydrocarbon combustion reactions. In this paper, we investi gate the characteristics of dielectric barrier discharge with co axial electrodes structure driven by repetitive microsecond pulse (rise time 10 μs, PRF 6 kHz, pulse...
In this paper, we studied hole transport in highly scaled (down to 14nm-node) FDSOI devices, from 77K to 300K in the coupling condition. We studied mobility enhancement by Ge% and back biasing. Then, mobility degradation in short channel devices was intensively analysed and additional scattering mechanisms were revealed in terms of their origin and location.
A detailed characterization of low temperature operation of n and p MOS devices from 14nm FDSOI CMOS technology has been conducted. The transfer characteristics measured between 77K and 300K exhibit very good performance for effective gate lengths down 15nm, emphasizing the very good control of short channel effects and subthreshold behavior. Moreover, the temperature dependence of the low field mobility...
In this work, we demonstrate the powerful methodology of electronic transport characterization in UTBB FD-SOI devices using cryogenic operation under interface coupling measurement condition. At first we study quantitatively the high-k/metal gate stack-induced transport behavior in long channel case, and, then we investigate the transport properties evolution in highly scaled devices. Mobility degradation...
Recent researches have shown that the adaptive directional lifting (ADL) can represent edges and textures in images effectively. This makes it possible to separate noise from image signal distinctly in image denoising. However, a key issue named orientation estimation for ADL becomes inefficient and error prone in the noised circumstance. The authors propose a robust adaptive directional lifting-based...
Based on the numerical forecast products of T213 and Japan, a new nonlinear rainstorm prediction model is developed for local heavy rain. The Japanese rainfall forecast products is used to distinguish the likelihood of heavy rain 24 hours later. Then the Chebyshev sliding nested expansion is applied to the forecast field by T213 for forecast factors best correlated with the series of rainfall. And...
In this paper, a 200 nm n-channel inversion-type self-aligned In0.53Ga0.47As MOSFET with a Al2O3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and drain regions. The 200 nm gate-length MOSFET with a gate oxide thickness of 8 nm features the transconductance...
The tubular electrothermal component will produce thermal stress when water in the tube is heated by electricity, which is one of important factors to induce fracture. In this paper, the temperature field and thermal stress field models were established when the inflow and outflow achieved heat balance. According to this model, the distribution of thermal stress and temperature along diameter for...
We present two different configurations for the detection of Bloch surface waves in silicon nitride multilayers: attenuated total reflectance and photoluminescence measurements. In the first case, we measured a 50-fold enhancement of the diffraction signal by a protein grating printed on the multilayer when the incident light beam is coupled to the surface waves. In the second case, we observe a significant...
In this paper, we study the direct design of M-channel nonuniform filter banks (NUFBs) and propose a novel method for the NUFBs with linear-phase (LP) property. The filter banks we are concerned with have integer decimation factors and satisfy the maximal decimation condition. We derive a design criterion for the LP NUFBs. In addition, we propose certain modification on the direct structure, achieving...
As field programmable gate array (FPGA) based systems scale up in complexity, energy aware designs paradigms with strict power budgets require the designer to explore all viable options for minimising dynamic power consumption. The concepts of parallelism and pipelining have long been exploited in CMOS chips to reduce power and energy consumption. In this paper, a systematic empirical study of the...
In this paper a gas discrimination system based on five classification algorithms including K nearest neighbors (KNN), multi-layer perceptron (MLP), radial basis function (RBF), Gaussian mixture model (GMM) and probabilistic principal component analysis (PPCA) has been presented. A Committee machine (CM) is used in which the results from each classifier are first transformed to confidences and then...
This work shows that charge trapping and detrapping in the gate oxide, which produce low-frequency noise in the drain current of MOSFET's in the classical transport regime, disappear when quantum transport becomes important. In this latter regime, a new type of low frequency fluctuations is observed.
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