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A unified model for gate capacitance-voltage characteristics of Si/SiGe heterostructure pMOSFETs is presented. This model is applicable to buried-channel, surface-channel, and dual-channel Si/SiGe heterostructure pMOSFETs. The results from the model are compared with the experimental results and are found to be in excellent agreement. A simple and accurate method for the extraction of parameters such...
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