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A two step gate dielectric deposition technique on GaN, viz. thermal oxidation of Low Pressure Chemical Vapor Deposited (LPCVD) silicon is reported. Current-Voltage (I-V) and Capacitance-Voltage (C-V) characterization of the Metal Insulator Semiconductor (MIS) capacitors are carried out to assess the interface properties. MIS devices with thermal oxide show improved I-V characteristics compared to...
MIS capacitors on nitrided and non-nitrided Ge substrates with HfO2 as the dielectric have been studied. Effective oxide thickness is found to be reduced after nitridation. Significant improvements in the electrical characteristics are observed for the devices fabricated on nitrided substrates. The value of density of interface states is found to be lower for nitrided device when compared to non-nitrided...
In this paper, electrical and reliability properties of ultrathin silicon dioxide, grown by immersing silicon in nitric acid solution have been studied. It is observed that the temperature, oxidation time, and concentration of the nitric acid solution play important roles in determining the thickness as well as the quality of the oxide. Prolonged exposure to nitric acid degrades the quality of the...
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