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In this paper, a 7 Gb/s/pin 1 Gb GDDR5 DRAM with an array architecture for fast column access, a boosting transmitter, multiple voltage (V|NT) domains to control on chip power noise, and a high-speed internal VINT power generator system are presented. This 1Gb GDDR5 memory device is fabricated in a conventional 75 nm DRAM process and characterized for a 7Gb/s/pin data transfer rate at 1.5 V. To achieve...
A 512Mb DRAM operates up to a data-rate of 2Gb/s/pin. It employs an averaging pad-driver design which reduces simultaneous switching noise to one third of a conventional design. Resistive damping elements eliminate the level degradation of the receivers caused by an oscillation of the on-chip ground. A technique for cancelling line-to-line coupling noise is also described
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