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We performed detailed analysis of the abnormal growth of Ni silicide that causes leakage-current failure in CMOS devices. We investigated the three-dimensional shape and the crystal microstructure of the abnormal growth by using advanced transmission electron microscope (TEM) techniques: electron tomography and spatially-resolved electron energy-loss spectroscopy (EELS). Furthermore, we revealed that...
We developed a new simple X-ray scattering method for determining the pore size distribution in porous low-k film on silicon substrate without the destruction of the low-k film. We succeeded to observe the tungsten in porous MSQ (Methyl Silses Quioxane) film by TEM after the filling of tungsten into the pores by tungsten chemical vapor deposition (CVD). Furthermore, we compared this Small Angle X-ray...
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