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We report on the operation of electrically pumped 1.3µm InAs QD laser directly grown on a Si substrate using InAlAs/GaAs dislocation filter layers with a threshold current density of 194A/cm2 and output power of ~80mW.
In conclusion we have evaluated the potential of In(Ga)As quantum dots grown on silicon as photodiodes by characterising their electrical and optical properties. The responsivity spectra showed a peak related to quantum dot transition at 1280 nm of 5 mA/W, with an absorption tail extending beyond 1.3 µm. The measured dark currents are over three orders of magnitude lower than those for Ge on Si detectors...
We present a room-temperature 1.3-µm InAs/GaAs quantum dot laser monolithically grown on Si(100). The threshold current at 20°C was 725A/cm2 and the emission wavelength was 1.302µm. The laser was operated in pulsed mode. The growth was enabled via the optimisation of the temperature of the initial nucleation layer of GaAs.
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