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Test mode power dissipation has been found to be much more than the functional power dissipation. Since dynamic power dissipation had a major contribution to the heat generated, most of the studies focused on reducing the transitions during testing. But at submicron technology, leakage current becomes significantly high. This demands a control on the leakage current as well. In this work, we propose...
In this paper, a comparative study has been performed on the locations of charge centroid and quantized carrier distributions for conventional and strained-Si MOS capacitors. The induced channel strain has been observed to modify surface quantization effect significantly. The position of charge centroid and the relevant carrier distribution have been studied for the variation of gate dielectric layer...
In this paper, an analytical model of threshold voltage for globally strained Si/SiGe CMOS devices using a dual channel architecture is proposed. Since band parameters modify , they are calculated and generalized for different Ge contents in a film grown on relaxed virtual substrates . A model for predicting is then developed by considering device geometry and material properties, including band parameters,...
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