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Perpendicular Spin-Transfer Torque (STT) MRAM is a promising technology in terms of read/write speed, low power consumption and non-volatility, but there has not been a demonstration of high density manufacturability at small geometries. In this paper we present an unprecedented demonstration of a robust STT-MRAM technology designed in a 2x nm CMOS-embedded 40 Mb array. Key features are full array...
Pt/Poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV)/polyethylene oxide (PEO) + Alkali ions/Ag devices were fabricated. Microstructure analysis indicated that Cs and K ions were doped initially into the semiconducting polymer after fabrication, which suggests resemblance to the resting state of bio-synapse. The pulse responses of Cs-doped device potentiated monotonically with increased...
We demonstrate an ErAs:InGaAs photomixer that incorporates plasmonic contact electrodes to enhance device quantum efficiency and, thus, offers significantly higher radiation power levels compared to previously demonstrated photomixer designs pumped at 1.55 um wavelength range.
We demonstrate significant enhancement in terahertz radiation power from a photomixer that incorporates plasmonic contact electrodes. The plasmonic contact electrodes reduce the average transport path of photocarriers to the contact electrodes, increasing the ultrafast photocurrent that drives the terahertz antenna. We experimentally demonstrate an order of magnitude higher radiated power from a photomixer...
This paper presents a capacitor discharge sintering process with a homemade silver-nickel paste for thermoelectric element interconnections. The paste is a 75 nm silver/nickel composite mixture. Without using any specific atmosphere control, the capacitor discharge is capable of nanoparticle sintering with time-efficient process at room temperature. A 0.01 F capacitor is serially connected to the...
We experimentally demonstrate an order of magnitude higher radiated power from a 1550 nm photomixer with plasmonic contact electrodes in comparison with an analogous photomixer without plasmonic contact electrodes in the 0.25–2.5 THz frequency range.
This paper presents a high performance capacitive micromachined ultrasound sensor (CMUS) with a large fractional bandwidth (FB) ∼113 % and a low bias voltage of 5 V in an immersion testing of an ultrasonic sensor. The thin polysilicon for the CMOS gate was utilized as a sacrificial layer and the multiple layers of metal and dielectric for the CMOS electric interconnects were used as the structural...
The effects of top metal contacts on the leakage current and breakdown characteristics of HfO2 metal-insulator-metal (MIM) capacitors were investigated. It is found that the breakdown field strength of the devices scales with the work function of the top electrode; the higher the metal work function the higher the breakdown field strength of the devices. This observation is attributed to the different...
Planar metal-semiconductor-metal light-emitting diodes with InGaN/GaN multi-quantum-wells (MQWs) as the active layer have been demonstrated for the first time. The diodes with interdigitated Schottky electrodes fabricated on p-GaN contact layer exhibit symmetrical current-voltage characteristic with a turn-on voltage of ~ 13 V at 20 mA. The violet light emission centred at 408 nm is generated by radiative...
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