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By using sidewall electrode technology, both record small functional TiO2 selection device (1 × 5 nm2) and HfO2 based RRAM device (1 × 3 nm2) were for the first time successfully demonstrated in this work, improving the understanding of the switching mechanism in an ultra-small, functional resistive random access memory (RRAM) device. The tunneling based low temperature back-end selection devices...
A sidewall electrode technology was successfully developed for the first time in this study, improving the understanding of the working mechanism in an ultra small, functional HfO2-based resistive random access memory (RRAM) device (< 1 × 3 nm2). This technology exhibits potential for application in atomic-scale memories. The 1 × 3 nm2 RRAM device exhibited an excellent performance, featuring a...
One of the crucial factors that affects the performance of solid electrolyte - lithium-ion batteries is the electrode/electrolyte contact characteristics. Better contact implies greater ion transfer efficiency, leading to improved charge/discharge characteristics, and higher-power densities. In this study, the authors investigate the contact characteristics, viz. wettability, of germanium nanorod...
In summary, this paper demonstrates fixed-beam switches using well-aligned composite SWNT membranes can be switched at low voltage and high frequency. The measured DC pull-in voltages ranged from 0.9V to 4.8 V depending on the length of the switch. AC measurements indicate a switching delay as low as 600 psec for 300 nm beams. This new SWNT composite membrane switch is promising for a variety of applications...
This paper demonstrates fixed-beam switches using well-aligned composite SWNT membranes, which were prepared by dielectrophoretic process with Layer-by-Layer self-assembly. The measured DC pull-in voltages ranged from 0.9 V to 4.8 V, depending on the length of switches. AC measurements indicate a switching delay as low as 600 psec for 300 nm beams. This new SWNT composite membrane switch is promising...
Metal ions embedded in dielectric films may play an important role in the reliability of advanced interconnect systems. In this talk, we will discuss the generation and drift of different metal ions such as Cu, Ta, and Ti into the dielectric materials from gate electrodes under an external electric field at elevated temperatures. Some strategies to eliminate the generation of metal ions will also...
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