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Uncooled 10-Gbit/s, 80- km SMF transmission was demonstrated for the first time using a 1.55-μm InGaAlAs EA/DFB laser. A power penalty below 2-dB was achieved over a wide temperature range from 15°C to 95°C.
New uncooled 1,550-nm InGaAlAs electroabsorption-modulators and their laser-integration technologies were developed for 10/40-Gbit/s small-form-factor modules. For the first time, 10-Gbit/s 40-km SMF transmission and 40-Gbit/s operation were achieved up to 85degC
The catastrophic optical damage level of a 780 nm AlGaAs laser diode is increased by extending the optical beam profile by using a low-Al-content layer in the cladding layer. A higher light output power can be obtained without increasing threshold current, and reliable operation for more than 1000 h at 60 mW output and 50 degrees C ambient is obtained.<<ETX>>
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