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Carrier transport in heavily doped extremely thin silicon- on-insulator (ETSOI) diffusion layers with SOI thickness of less than 10 nm was thoroughly studied. We found that electron mobility ( μe) in heavily doped ETSOI diffusion layer is totally different from μe in heavily doped bulk Si. In ETSOI diffusion layers with SOI thickness ranging from 5 nm to 10 nm μe is enhanced, compared with μe in heavily...
We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (??) enhancement (????/??) but also by the modulation of saturation velocity (vsat). It is found that vsat increases more by strain in smaller-????/?? devices. The...
The dependence of the interface-trap-induced scattering on the electron kinetic energy (epsivele) in nMOSFETs is investigated experimentally. The procedure to extract the accurate epsivele dependence of the interface-trap-induced scattering relationship is developed based on the careful Hall effect measurements. As a result, it is demonstrated that as epsivele increases, the interface-trap-induced...
The physical mechanisms of electron mobility (??e) enhancement by uniaxial stress are investigated for nMOSFETs with surface orientations of (100) and (110). From full band calculations, uniaxial-stress-induced split of conduction band edge (??EC) and effective mass change (??m*) are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys...
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