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Periodic pyramid and random nanostructure binary structures of single-crystal silicon wafer was fabricated by chemical etching method. Much lower reflectance of silicon wafer with these structures was obtained compared with that of single pyramid arrays. The morphology and reflectivity of these structures, as well as the influence on nanostructures caused by rapid thermal annealing (RTA) time and...
This paper reports a new type betavoltaic (BV) microcell based on intrinsic p-type semiconductive single-walled carbon nanotubes (s-SWNTs). Our device composes of Au and Ti asymmetrical electrode pairs with s-SWNTs laid over them forming Schottky junction with Ti and ohmic contact with Au. SWNT bundles were self-assembled between Au and Ti electrodes by Dieletrophoretic (DEP) technique, and metallic...
We present on high efficiency metal-insulator-semiconductor (MIS) photodetectors based on amorphous germanium quantum dots (QDs) embedded in a SiO2 matrix. High internal quantum efficiencies (IQE) were achieved across a broad wavelength range, with peak value reaching 700% at −10 V applied bias due to high internal photoconductive gain. The transient photoresponse behavior is also studied and it was...
Periodic sub-wavelength nanocones were simulated for antireflection with three different heights: 300, 500 and 700 nm on Si substrate. On the top of nanocones, we add a layer of Ni and SiO2 with the thicknesses of 10 nm, 20 nm and 30 nm. The reflective characteristics of nanostructures with or without nanomasks were studied by rigorous coupled-wave analysis (RCWA).
The mechanical degradation of electrodes caused by lithiation and delithiation is one of the main factors responsible for the short cycle life of lithium-based batteries employing high capacity electrodes. In this report, we introduced a simple patterning approach to improve the cycling stability of silicon electrode, which is considered as the next generation negative electrode due to its high Coulombic...
Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found.
In a previous study (B. Reihl and K.O. Magnusson, Phys. Rev. B 42 (1990) 11 839) no change was observed in the LEED pattern from the 2 1 pattern of the clean Si(111) surface upon potassium adsorption. In contrast to this paper, we observe six surface phases during room temperature dosing of K on the cleaved Si(111) surface. In addition, we observe a 3 1 pattern on the cleaved K/Si(111) surface...
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