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Ion implantation profiles of boron after a BF3 plasma immersion ion implantation in a plasma implanter with a pulsed voltage ion extraction were investigated both experimentally and by means of numerical simulation. Boron profiles for different ion implantation doses in the range 1015 to 1017 cm−2 were measured using the SIMS method. Simulations were performed using a Monte-Carlo based binary-collision...
Coupled process and device simulation is applied for the optimization of the doping in 0.18<space>μm CMOS transistors. An advanced device architecture with a pocket type doping around the source/drain extensions was assumed to reduce the short channel effects. Two optimization targets were considered: the drain drive current at a fixed leakage current and a special figure of merit which characterizes...
The fully overlapped nitride mask defined (FOND) MOSFETs1) exhibit a much better immunity with respect to hot carrier degradation compared to conventional LDD devices. The reason for the better reliability performance of these devices is the special shape of the LDD extentions formed by the FOND process. In order to simulate electrical properties and hot carrier degradation characteristics of FOND...
With a novel delineation technique, the increase in dopant concentration due to ions which have been scattered out of a vertical mask edge during ion implantation was demonstrated. The equiconcentration lines show that the implanted concentration near the mask edge is greater than that in the middle of the implantation window. This effect could be simulated qualitatively with a Monte Carlo simulation...
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