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This work addresses the study of active edge n-in-p planar sensors. Active edge planar pixel sensors are promising candidates to instrument the inner layers of the new ATLAS pixel detector for High Luminosity Large Hadron Collider (HL-LHC), thanks to its radiation tolerant properties and the increased fraction of active area due to a distance as low as 50 μm between the last pixel implants and the...
The design of an interface to a specific sensor induces costs and design time mainly related to the analog part. So to reduce these costs it should have been standardized like digital electronics. The aim of the present work is the elaboration of a method based on multi objectives genetic algorithms (MOGAS) to allow automated synthesis of analog and mixed systems. This proposed methodology is used...
The OMEGAPIX2 chip embeds a matrix of channels implemented in two vertically integrated (3D) circuits and designed to read out a matrix of 96×24 plannar pixels. The form factor of each pixel is 35×200 µm. The first 3D devices's layer includes the analogue part of the channel processing, it will be bounded to the sensor by connecting the channel inputs and the sensors pixels by the Through Silicon...
We present a model for the TCAD simulation of charge multiplication and trap-to-band tunneling to explain the discrepancies between the experimentally observed charge collection in highly irradiated planar pixel sensors and the predictions made using the Hamburg model. DC and transient TCAD simulations of one dimensional n-in-p diodes were performed and reproduce well the observed behavior of diode...
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