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Sensing and imaging at millimeter-wave and THz frequencies is promising for a wide range of applications, including security, industrial control, healthcare, and scientific metrology. The development of high-sensitivity, low noise detectors based on interband tunneling in III-V heterostructure devices, and their integration into subsystems is promising for realizing the potential of these applications...
We report switching performance of perpendicularly magnetized Spin-Transfer Torque MRAM (STT-MRAM) devices with double tunnel barriers and two reference layers. We show that stacks with double tunnel barriers improve the switching efficiency (Eb/Ic0) by 2x, when compared to similar stacks with a single tunnel barrier. Switching efficiency up to 10 kBT/uA was observed in single devices. A large operating...
Spin Transfer Torque Magnetic Random Access Memory (MRAM) possesses a unique combination of high speed, high endurance, non-volatility, and small cell size. Among the emerging new memory technologies, including phase change memory, resistive random access memory, and conductive bridging random access memory, Spin Transfer Torque MRAM is the only candidate with the potential for unlimited endurance,...
Full channel and Macaroni-type 3-D SONOS memories are thoroughly compared. Macaroni channel provides easier device controllability, resulting in tighter distributions of all electrical characteristics, at the expense of lower channel conduction. Next to this clear trade-off, memory window is also degraded. Improving channel material quality is the way to alleviate the trade-off, as demonstrated by...
A detailed design of class-F power-amplifier with a load harmonic network for third harmonic peaking is presented where initially ideal lossless transmission lines and then microstrip lines with losses are used. When the load network is realized using microstrip lines the effect of discontinuities is taken into account. For a network with ideal transmission lines, a 3Ω resistor is used in series with...
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